The CIF RIE reactive ion etching system is based on reactive ion etching technology, enabling high-precision anisotropic microstructure fabrication on material surfaces through the synergistic interaction of ion-driven physical sputtering and chemical reactions mediated by reactive free radicals. The system delivers a high etch rate while maintaining excellent pattern fidelity. With an integrated and user-centric design, it offers low operational costs, high cost-effectiveness, ease of maintenance, high processing efficiency, robust process controllability, and reliable safety performance. It is well suited for use in universities, research institutes, and microelectronics or semiconductor enterprise laboratories conducting research on etching processes for various materials.

Working principle

Plasma etching machines, also referred to as dry etching systems, are critical tools in semiconductor fabrication. These systems operate by utilizing plasma to selectively remove materials, thereby enabling the precise transfer of mask patterns onto the substrate surface.

Within a vacuum-sealed reaction chamber, specific process gases-such as CF₄ and Cl₂- are introduced and ionized via radio frequency (RF) power to generate reactive plasma. The resulting plasma contains active free radicals that engage in chemical reactions with the material surface, while high-energy ions, accelerated under an electric field, induce physical sputtering. This combined physicochemical mechanism facilitates highly anisotropic and accurate pattern etching at the micro- and nanoscale.

By precisely regulating key process parameters-including RF power, gas composition and flow rate, chamber pressure, temperature, and process duration-the etch rate, selectivity, and profile morphology for various materials-such as dielectrics, silicon, and metals-can be effectively controlled, thereby satisfying the stringent and diverse demands of advanced micro- and nano-fabrication processes.

Applications

Plasma etcher system is suitable for precision cleaning, surface activation, and mild etching processes of wafers, substrates, devices, and related components in the fields of semiconductors, microelectronics, MEMS, and advanced packaging. It is designed to accommodate both the flexibility required in research and development and the process stability demanded in production environments.

Function & Features

Intelligent Control and Operation 

• The system is equipped with a 7-inch color touchscreen interface, supporting both Chinese and English languages, enabling real-time monitoring and precise automatic control of process parameters. 
• It integrates 20 pre-programmed process recipes and supports comprehensive data storage and traceability functions, ensuring high repeatability and consistency across processing cycles. 
• Powered by a PLC-based industrial control system, it offers dual operation modes-manual and automatic-delivering stable, reliable, and highly controllable process performance. 
• The control panel features an ergonomically designed 60° tilt angle, optimizing visibility and operational convenience.

Chamber and Vacuum System 

• The vacuum chamber and all associated piping are constructed from 316 stainless steel, offering superior corrosion resistance and maintaining a contamination-free processing environment. 
• A top-opening lid with a downward-actuated hinge mechanism ensures smooth opening and closing operations, along with a secure and reliable sealing performance.

Gas Delivery and Distribution 

• Standard configuration includes two high-precision, corrosion-resistant digital mass flow controllers (MFCs), compatible with various process gases including oxygen, argon, nitrogen, carbon tetrafluoride, and hydrogen; optional multi-gas configurations are available for expanded application needs. 
• A multi-orifice diffuser gas inlet design replaces the conventional single-point inlet, achieving uniform gas distribution within the chamber and significantly enhancing process uniformity and consistency.

Sample Handling and Safety 

• The system incorporates an upper-mounted sample stage that enables 360° horizontal access for convenient and ergonomic sample loading and unloading. 
• It provides a large effective processing area, accommodating wafers or silicon substrates up to 200 mm (8 inches) in diameter. 
• Equipped with HEPA high-efficiency filtration and gas back-blowing functionality, it effectively prevents particle-related secondary contamination. 
• Integrated safety interlock mechanisms automatically cut off power upon chamber door opening, while a visible status indicator light clearly displays system operation conditions, ensuring safe and reliable operation.

Technical Specifications

Model	RIE200	RIE200plus
Chamber Size	H124xΦ280mm	H124xΦ280mm
Chamber Volume	7.6L	7.6L
RF Frequency	13.56MHz	13.56MHz
Electrode	Stainless steel gas bath RIE electrode，Φ220mm	Stainless steel gas bath RIE electrode，Φ220mm
Matcher	Auto Matching	Auto Matching
Etching Mode	RIE	RIE
RF Power	10-300W adjustable (Optional: 10-600W）	10-300W adjustable （Optional:10-600W）
Gas Control	Mass flowmeters (MFC, Standard: double MFC; Optional: Multi MFC); Flow range: 0-500SCCM, adjustable
Process Gas	Ar、N₂、O₂、H₂、CF4、CF4+ H2, CHF3 or mixers (optional)
Max. sample size	Φ154mm	Φ154mm
Vacuum Pump	Dry Pump	Dry Pump + molecular pump
Product Size	L520xW600xH470mm
Packing Size	L640xW750xH725mm
Time Setting	9999 sec
Power Supply	AC220V 50-60Hz. All wiring layouts comply with relevant national standards, including the Low Voltage Distribution Design Code (GB50054-95) and the Low Voltage Distribution Device and Circuit Design Code.
Net Weight	38kg

CIF is a Chinese manufacturer of plasma cleaners, UV Ozone cleaners, spin coaters. Our factory covers an area of over 4000 square meters. We have obtained a number of patents and have passed GB/ T19001-2016 /ISO9001-2015 quality management system certification, GB/T24001- 2016/ISO14001:2015 environmental management system certification.